? semiconductor components industries, llc, 2006 march, 2006 ? rev. 3 1 publication order number: dtc114em3/d dtc114em3t5g series digital transistors (brt) npn silicon surface mount transistors with monolithic bias resistor network this new series of digital transistors is designed to replace a single device and its external resistor bias network. the digital transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base?emitter resistor. the digital transistor eliminates these individual components by integrating them into a single device. the use of a digital transistor can reduce both system cost and board space. the device is housed in the sot?723 package which is designed for low power surface mount applications. features ? simplifies circuit design ? reduces board space ? reduces component count ? the sot?723 package can be soldered using wave or reflow. ? available in 4 mm, 8000 unit tape & reel ? these are pb?free devices maximum ratings (t a = 25 c unless otherwise noted) rating symbol value unit collector-base voltage v cbo 50 vdc collector-emitter voltage v ceo 50 vdc collector current i c 100 madc maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. npn silicon digital transistors pin 3 collector (output) pin 2 emitter (ground) pin 1 base (input) r1 r2 xx = specific device code (see marking table on page 2) m = date code http://onsemi.com see detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ordering information marking diagram sot?723 case 631aa style 1 3 2 1 xx m
dtc114em3t5g series http://onsemi.com 2 device marking and resistor values device marking r1 (k) r2 (k) package shipping ? dtc114em3t5g 8a 10 10 sot?723 (pb?free) 8000/tape & reel dtc124em3t5g 8b 22 22 dtc144em3t5g 8c 47 47 dtc114ym3t5g 8d 10 47 dtc114tm3t5g 8e 10 dtc143tm3t5g 8f 4.7 dtc123em3t5g 8h 2.2 2.2 dtc143em3t5g 8j 4.7 4.7 dtc143zm3t5g* 8k 4.7 47 dtc124xm3t5g* 8l 22 47 dtc123jm3t5g 8m 2.2 47 DTC115EM3T5G 8n 100 100 dtc144wm3t5g* 8p 47 22 dtc144tm3t5g 8t 47 ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. *available upon request. thermal characteristics characteristic symbol max unit total device dissipation, fr?4 board (note 1) @ t a = 25 c derate above 25 c p d 260 2.0 mw mw/ c thermal resistance, junction?to?ambient (note 1) r ja 480 c/w total device dissipation, fr?4 board (note 2) @ t a = 25 c derate above 25 c p d 600 4.8 mw mw/ c thermal resistance, junction?to?ambient (note 2) r ja 205 c/w junction and storage temperature range t j , t stg ?55 to +150 c 1. fr?4 @ minimum pad. 2. fr?4 @ 1.0 1.0 inch pad.
dtc114em3t5g series http://onsemi.com 3 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector?base cutoff current (v cb = 50 v, i e = 0) i cbo ? ? 100 nadc collector?emitter cutoff current (v ce = 50 v, i b = 0) i ceo ? ? 500 nadc emitter?base cutoff current dtc114em3t5g (v eb = 6.0 v, i c = 0) dtc124em3t5g dtc144em3t5g dtc114ym3t5g dtc114tm3t5g dtc143tm3t5g dtc123em3t5g dtc143em3t5g dtc143zm3t5g dtc124xm3t5g dtc123jm3t5g DTC115EM3T5G dtc144wm3t5g dtc144tm3t5g i ebo ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0.5 0.2 0.1 0.2 0.9 1.9 2.3 1.5 0.18 0.13 0.2 0.05 0.13 0.2 madc collector?base breakdown voltage (i c = 10 a, i e = 0) v (br)cbo 50 ? ? vdc collector?emitter breakdown voltage (note 3) (i c = 2.0 ma, i b = 0) v (br)ceo 50 ? ? vdc on characteristics (note 3) dc current gain dtc114em3t5g (v ce = 10 v, i c = 5.0 ma) dtc124em3t5g dtc144em3t5g dtc114ym3t5g dtc114tm3t5g dtc143tm3t5g dtc123em3t5g dtc143em3t5g dtc143zm3t5g dtc124xm3t5g dtc123jm3t5g DTC115EM3T5G dtc144wm3t5g dtc144tm3t5g h fe 35 60 80 80 160 160 8.0 15 80 80 80 80 80 160 60 100 140 140 350 350 15 30 200 150 140 150 140 350 ? ? ? ? ? ? ? ? ? ? ? ? ? ? collector?emitter saturation voltage (i c = 10 ma, i b = 0.3 ma) (i c = 10 ma, i b = 5 ma) dtc123em3t5g (i c = 10 ma, i b = 1 ma) dtc143tm3t5g/dtc114tm3t5g/ dtc143em3t5g/dtc143zm3t5g/ dtc124xm3t5g/dtc144tm3t5g v ce(sat) ? ? 0.25 vdc output voltage (on) (v cc = 5.0 v, v b = 2.5 v, r l = 1.0 k ) dtc114em3t5g dtc124em3t5g dtc114ym3t5g dtc114tm3t5g dtc143tm3t5g dtc123em3t5g dtc143em3t5g dtc143zm3t5g dtc124xm3t5g dtc123jm3t5g (v cc = 5.0 v, v b = 3.5 v, r l = 1.0 k ) dtc144em3t5g dtc144tm3t5g (v cc = 5.0 v, v b = 5.5 v, r l = 1.0 k ) DTC115EM3T5G (v cc = 5.0 v, v b = 4.0 v, r l = 1.0 k ) dtc144wm3t5g v ol ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 vdc 3. pulse test: pulse width < 300 s, duty cycle < 2.0%.
dtc114em3t5g series http://onsemi.com 4 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit on characteristics (note 4) characteristic symbol min typ max unit output voltage (off) (v cc = 5.0 v, v b = 0.5 v, r l = 1.0 k ) (v cc = 5.0 v, v b = 0.25 v, r l = 1.0 k ) dtc143tm3t5g dtc143zm3t5g dtc114tm3t5g dtc144tm3t5g v oh 4.9 ? ? vdc input resistor dtc114em3t5g dtc124em3t5g dtc144em3t5g dtc114ym3t5g dtc114tm3t5g dtc143tm3t5g dtc123em3t5g dtc143em3t5g dtc143zm3t5g dtc124xm3t5g dtc123jm3t5g DTC115EM3T5G dtc144wm3t5g dtc144tm3t5g r1 7.0 15.4 32.9 7.0 7.0 3.3 1.5 3.3 3.3 15.4 1.54 70 32.9 32.9 10 22 47 10 10 4.7 2.2 4.7 4.7 22 2.2 100 47 47 13 28.6 61.1 13 13 6.1 2.9 6.1 6.1 28.6 2.86 130 61.1 61.1 k resistor ratio dtc114em3t5g/dtc124em3t5g/ dtc144em3t5g/DTC115EM3T5G dtc114ym3t5g dtc143tm3t5g/dtc114tm3t5g/dtc144tm3t5g dtc123em3t5g/dtc143em3t5g dtc143zm3t5g dtc124xm3t5g dtc123jm3t5g dtc144wm3t5g r 1 /r 2 0.8 0.17 ? 0.8 0.055 0.38 0.038 1.7 1.0 0.21 ? 1.0 0.1 0.47 0.047 2.1 1.2 0.25 ? 1.2 0.185 0.56 0.056 2.6 4. pulse test: pulse width < 300 s, duty cycle < 2.0%. figure 1. derating curve 250 200 150 100 50 0 ?50 0 50 100 150 t a , ambient temperature ( c) p d , power dissipation (milliwatts) r ja = 480 c/w 300
dtc114em3t5g series http://onsemi.com 5 typical electrical characteristics ? dtc114em3t5g v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 2. v ce(sat) versus i c 10 02030 i c , collector current (ma) 10 1 0.1 t a =?25 c 75 c 25 c 40 50 figure 3. dc current gain figure 4. output capacitance 1 0.1 0.01 0.001 020 40 50 i c , collector current (ma) v ce(sat) , maximum collector voltage (volts ) 1000 100 10 1 10 100 i c , collector current (ma) t a =75 c 25 c ?25 c t a =?25 c 25 c figure 5. output current versus input voltage 75 c 25 c t a =?25 c 100 10 1 0.1 0.01 0.001 01 234 v in , input voltage (volts) 56 78 910 figure 6. input voltage versus output current 50 010203040 4 3 1 2 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) 75 c v ce = 10 v f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10
dtc114em3t5g series http://onsemi.com 6 typical electrical characteristics ? dtc124em3t5g v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 7. v ce(sat) versus i c figure 8. dc current gain figure 9. output capacitance figure 10. output current versus input voltage 1000 10 i c , collector current (ma) t a =75 c 25 c ?25 c 100 10 1 100 75 c 25 c 100 0 v in , input voltage (volts) 10 1 0.1 0.01 0.001 246810 t a =?25 c 0 i c , collector current (ma) 100 t a =?25 c 75 c 10 1 0.1 10 20 30 40 50 25 c figure 11. input voltage versus output current 0.001 v ce(sat) , maximum collector voltage (volt s t a =?25 c 75 c 25 c 0.01 0.1 1 40 i c , collector current (ma) 0 20 50 50 0 10 203040 4 3 2 1 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) i c /i b = 10 v ce = 10 v f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v
dtc114em3t5g series http://onsemi.com 7 typical electrical characteristics ? dtc144em3t5g v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 12. v ce(sat) versus i c 0246810 100 10 1 0.1 0.01 0.001 v in , input voltage (volts) t a =?25 c 75 c 25 c figure 13. dc current gain figure 14. output capacitance 100 10 1 0.1 010 20 3040 50 i c , collector current (ma) figure 15. output current versus input voltage 1000 10 i c , collector current (ma) t a =75 c 25 c ?25 c 100 10 1 100 25 c 75 c 50 010203040 1 0.8 0.6 0.4 0.2 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) figure 16. input voltage versus output current 0 20 40 50 10 1 0.1 0.01 i c , collector current (ma) 25 c 75 c v ce(sat) , maximum collector voltage (volt s v ce = 10 v f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 t a =?25 c t a =?25 c
dtc114em3t5g series http://onsemi.com 8 typical electrical characteristics ? dtc114ym3t5g 10 1 0.1 01020304050 100 10 1 0246810 4 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 1520 2530 3540 4550 v r , reverse bias voltage (volts) v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 17. v ce(sat) versus i c i c , collector current (ma) 020406080 v ce(sat) , maximum collector voltage (volts ) figure 18. dc current gain 1 10 100 i c , collector current (ma) figure 19. output capacitance figure 20. output current versus input voltage v in , input voltage (volts) c ob , capacitance (pf) figure 21. input voltage versus output current i c , collector current (ma) 1 0.1 0.01 0.001 ?25 c 25 c t a =75 c v ce = 10 300 250 200 150 100 50 0 2468 1520405060708090 f = 1 mhz l e = 0 v t a = 25 c 25 c i c /i b = 10 t a =?25 c t a =75 c 25 c ?25 c v o = 0.2 v t a =?25 c 75 c v o = 5 v 25 c 75 c
dtc114em3t5g series http://onsemi.com 9 typical applications for npn brts load +12 v figure 22. level shifter: connects 12 or 24 volt circuits to logic in out v cc isolated load from p or other logic +12 v figure 23. open collector inverter: inverts the input signal figure 24. inexpensive, unregulated current sourc e
dtc114em3t5g series http://onsemi.com 10 package dimensions 1.0 0.039 mm inches scale 20:1 0.40 0.0157 0.40 0.0157 0.40 0.0157 0.40 0.0157 0.40 0.0157 style 1: pin 1. base 2. emitter 3. collector sot?723 case 631aa?01 issue b *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* dim min nom max millimeters a 0.45 0.50 0.55 b 0.15 0.21 0.27 b1 0.25 0.31 0.37 c 0.07 0.12 0.17 d 1.15 1.20 1.25 e 0.75 0.80 0.85 e 0.40 bsc h 1.15 1.20 1.25 l 0.15 0.20 0.25 0.018 0.020 0.022 0.0059 0.0083 0.0106 0.010 0.012 0.015 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 bsc 0.045 0.047 0.049 0.0059 0.0079 0.0098 min nom max inches e notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions or gate burrs. d b1 e b e a l c h ?y? ?x? x 0.08 (0.0032) y 2x e 1 2 3 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 dtc114em3/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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